译文摘录(鉴于保密要求，敏感内容以“X”代替)：

        按照《半导体集成电路XXX型片上系统单粒子效应试验方案》，对XXX生产半导体集成电路XXX型片上系统进行单粒子效应试验。依据试验数据结果，得出结论如下：

SEE test is carried out to semiconductor integrated circuit XXX system on chip manufactured by XXX according to “SEE test plan for semiconductor integrated circuit XXX system on chip”. The following conclusions are drawn based on the test data:

1. XXX型片上系统的单粒子翻转饱和截面为6.99×10-4cm2/器件，单粒子翻转LET阈值为26.3MeV.cm2/mg，满足详细规范中的抗单粒子翻转指标LET ≥15MeV.cm2/mg；
1. For XXX system on chip, the saturated cross section of single event upset (SEU) is 6.99×10-4cm2/device and the SEU LET threshold is 26.3MeV.cm2/mg, conforming to the SEU-tolerant indicator specified in the detailed specification: LET ≥ 15MeV.cm2/mg;

2. XXX型片上系统的单粒子功能中断饱和截面为6×10-7cm2/器件，单粒子功能中断LET阈值为42.01MeV.cm2/mg（10%饱和截面）。利用Space Radiation5.0计算XXX型片上系统GEO轨道的单粒子功能中断率为3.61×10-8次/器件.天（太阳活动最小，Adams 90%最坏情况，3mm等效Al屏蔽），满足详细规范中的GEO轨道单粒子功能错误指标优于8×10-5次/天.器件；
2. For XXX system on chip, the saturated cross section of single event functional interrupt (SEFI) is 6×10-7cm2/device and the SEFI LET threshold is 42.01MeV.cm2/mg (10% saturated cross section). The SEFI rate of XXX system on chip on the GEO orbit is calculated by Space Radiation 5.0 to be 3.61×10-8 times/device•day (solar minimum, Adams 90% worst case, 3mm equivalent Al shielding), conforming to the SEFI rate indicator specified in the detail specification: SEFI rate on the GEO orbit is better than 8×10-5 times/day•device;

3. XXX型片上系统的单粒子锁定LET阈值高于99.8MeV.cm2/mg，满足详细规范中的抗单粒子锁定指标LET ≥75MeV.cm2/mg。
3. Single event latch-up (SEL) LET threshold of XXX system on chip is higher than 99.8MeV.cm2/mg, conforming to the SEL indicator specified in the detail specification: LET ≥ 75MeV.cm2/mg.