5.2单粒子效应检测内容

5.2 Test items of the single event effect

该器件单粒子烧毁和单粒子栅穿效应的检测包括V_GS在XXX条件下的安全工作区。

Detection on the single event burnout and gate rupture effect of the device includes testing the area of safe operation of VGS under the conditions of XXX.

1）单粒子安全工作区试验方法如下：

1)  The method for testing the area of safe single event operation is as follows:

试验离子注量率为XXX/cm²/s±XXX%，总注量为XXX/cm²。

The ion fluence rate in the test is XXX/cm²/s±XXX%, and the total fluence is XXX/cm².

由于在绝对值较大的负栅压条件下，某一漏压能够通过单粒子试验，则在绝对值小的负栅压下，必然能通过此漏压下的单粒子试验。因此，建议辐照器件初设偏置条件：V_GS=XXX、V_DS=XXXBV_DSS；（或依据器件实际情况设置），偏置矩阵如图2所示，沿箭头方向，先向上后向右。

As the device can pass the single event test at a certain drain voltage wherein the minus gate voltage has a larger absolute value, it will definitely pass such test under a minus gate voltage with a smaller absolute value. Therefore, it is advised to set the bias conditions at the early stage of irradiating the device: V_GS=XXX, V_DS=XXXBV_DSS; (or set as per the conditions of the device). The bias matrix is shown in Fig. 2, which goes up and turns right along the direction of the arrow.

若初始偏置下不发生SEB/SEGR，则在V_GS=-XXX条件下，对漏源电压按照XXXV_DS的增量进行递增施加，到V_DS达到最大击穿电压或发生单粒子烧毁或单粒子栅穿为止，每个V_DS偏置下均完成一次辐照流程；若初始偏置下发生SEB/SEGR，则对漏源电压按照10%V_DS的增量进行递减施加，直到不发生SEB/SEGR为止，每个V_DS偏置下均完成一次辐照流程。

If no SEB/SEGR occurs under initial bias, then under the condition of V_GS=XXX, the drain-source voltage is increased gradually with an increment of XXXV_DS, until the V_DSreaches the maximum breakdown voltage, or single event burnout or gate rupture occurs, and an irradiation process is completed under each V_DS bias; if SEB/SEGR occurs under initial bias, then drain-source voltage is decreased gradually with a decrement of XXXV_DS, until SEB/SEGR does not occur, and an irradiation process is completed under each V_DS bias.